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Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr
Panda et al., ACS Applied Materials & Interfaces 16, 2024, 1033-1043.
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Self-Biased High-Responsivity Photodetector Based on Bi2SeTe2 Topological Insulator
Sahu et al., ACS Appl Electron Mater 5, 2023, 6697-6703.
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Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles
Gastaldo et al., npj 2D Mater Appl 7, 2023, 71.
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Electrostatic Gating of Monolayer Graphene by Concentrated Aqueous Electrolytes
Abbas et al., J Phys Chem Lett 14, 2023, 4281-4288.
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Large-Area Mechanically-Exfoliated Two-Dimensional Materials on Arbitrary Substrates
Sahu et al., Adv Mater Technol 8, 2023, 2201993.
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Renewable Energy Transition Facilitated by Bitcoin
Velický, ACS Sustain Chem Eng 11, 2023, 3160-3169.
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Electrochemical Detection of Isolated Nanoscale Defects in 2D Transition Metal Dichalcogenides
Cabré et al., J Phys Chem C 126, 2022, 11636-11641.
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Nano-optical Visualization of Interlayer Interactions in WSe2/WS2 Heterostructures
Rodriguez et al., J Phys Chem Lett 13, 2022, 5854-5859.
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Activation of Raman modes in monolayer transition metal dichalcogenides through strong interaction with gold
Rodriguez et al., Phys Rev B 105, 2022, 195413.
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Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene
Jindra et al., J Phys Chem Lett 13, 2022, 642-648.
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Electrochemical kinetics as a function of transition metal dichalcogenide thickness
Cabré, Electrochimica Acta 393, 2021, 139027.
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Electrochemical Detection of Isolated Nanoscale Defects in 2D Transition Metal Dichalcogenides
Velický, J Phys Chem C 125, 2021, 21803-21809.
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Franckeite as an Exfoliable Naturally Occurring Topological Insulator
Paz et al., Nano Letters 21, 2021, 7781-7788.
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The Intricate Love Affairs between MoS2 and Metallic Substrates
Velický et al., Adv Mater Interfaces 7, 2020, 2001324.
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Electron Tunneling through Boron Nitride Confirms Marcus–Hush Theory Predictions for Ultramicroelectrodes
Velický et al., ACS Nano 14, 2020, 993-1002.