Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr
Panda et al., ACS Applied Materials & Interfaces 16, 2024, 1033-1043.
Self-Biased High-Responsivity Photodetector Based on Bi2SeTe2 Topological Insulator
Sahu et al., ACS Appl Electron Mater 5, 2023, 6697-6703.
Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles
Gastaldo et al., npj 2D Mater Appl 7, 2023, 71.
Electrostatic Gating of Monolayer Graphene by Concentrated Aqueous Electrolytes
Abbas et al., J Phys Chem Lett 14, 2023, 4281-4288.
Large-Area Mechanically-Exfoliated Two-Dimensional Materials on Arbitrary Substrates
Sahu et al., Adv Mater Technol 8, 2023, 2201993.
Renewable Energy Transition Facilitated by Bitcoin
Velický, ACS Sustain Chem Eng 11, 2023, 3160-3169.
Electrochemical Detection of Isolated Nanoscale Defects in 2D Transition Metal Dichalcogenides
Cabré et al., J Phys Chem C 126, 2022, 11636-11641.
Nano-optical Visualization of Interlayer Interactions in WSe2/WS2 Heterostructures
Rodriguez et al., J Phys Chem Lett 13, 2022, 5854-5859.
Activation of Raman modes in monolayer transition metal dichalcogenides through strong interaction with gold
Rodriguez et al., Phys Rev B 105, 2022, 195413.
Localized Spectroelectrochemical Identification of Basal Plane and Defect-Related Charge-Transfer Processes in Graphene
Jindra et al., J Phys Chem Lett 13, 2022, 642-648.
Electrochemical kinetics as a function of transition metal dichalcogenide thickness
Cabré, Electrochimica Acta 393, 2021, 139027.
Electrochemical Detection of Isolated Nanoscale Defects in 2D Transition Metal Dichalcogenides
Velický, J Phys Chem C 125, 2021, 21803-21809.
Franckeite as an Exfoliable Naturally Occurring Topological Insulator
Paz et al., Nano Letters 21, 2021, 7781-7788.
The Intricate Love Affairs between MoS2 and Metallic Substrates
Velický et al., Adv Mater Interfaces 7, 2020, 2001324.
Electron Tunneling through Boron Nitride Confirms Marcus–Hush Theory Predictions for Ultramicroelectrodes
Velický et al., ACS Nano 14, 2020, 993-1002.